کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9670648 | 1450405 | 2005 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Si0.85Ge0.15 oxynitridation in wet-nitric oxide ambient
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
Nitric oxide (NO) aided Si0.85Ge0.15 wet-oxynitridation has been performed at 400-700 °C, while the wet-NO feed gas was preheated to higher temperatures before entering the reaction zone. X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy data suggests that both nitrogen and oxygen incorporation increases within the dielectric bulk with increasing wet-oxynitridation temperature, while there is no apparent germanium segregation towards the dielectric/substrate interface at all temperatures studied. Moreover, angle-resolved XPS analysis suggests that wet-oxynitridation at temperatures higher than 600 °C volatilizes some germanium oxide from the surface region, while silicon monoxide is outgassed from the dielectric bulk and accumulates near the surface. Nitrogen incorporation is found to hinder germanium segregation. Z-contrast imaging with scanning transmission electron microscopy shows that oxynitrides grown in wet-NO have sharp interfaces with bulk Si0.85Ge0.15, while the roughness of the dielectric/Si0.85Ge0.15 substrate interface is less than 2 Ã
. These results are discussed in the context of an overall mechanism of SiGe wet-oxynitridation.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 77, Issues 3â4, April 2005, Pages 242-249
Journal: Microelectronic Engineering - Volume 77, Issues 3â4, April 2005, Pages 242-249
نویسندگان
Anindya Dasgupta, Christos G. Takoudis, Yuanyuan Lei, Nigel D. Browning,