کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9699121 | 1461440 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Initial growth behaviors of SiGeC in SiGe and C alternate deposition
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Initial growth behaviors of SiGeC in SiGe and C alternate deposition Initial growth behaviors of SiGeC in SiGe and C alternate deposition](/preview/png/9699121.png)
چکیده انگلیسی
The initial growth process of Si1âxâyGexCy epitaxial thin films on Si(1 0 0) surfaces has been investigated by scanning tunneling microscopy. We attempted sequential alternate deposition of one-monolayer(ML)-thick Si0.793Ge0.207 and 0.048-ML-thick C layer grown at 600 °C in order to control C adsorption sites for the formation of epitaxial Si0.769Ge0.183C0.048 layer. In the conventional co-deposition case of Si, Ge, and C at 600 °C, it was observed that the local phase separation to Si-Ge and Si-C occurred on the surface due to the C condensation. Three-dimensional (3D) islands were formed as a result of the disturbance of conformal growth induced by defects formed on the surface. On the other hand, in the alternate deposition case, it was observed that the homogeneous distribution of Si, Ge, and C atoms led to suppression of the local phase separation, the 3D island growth, and the defect formation. As a result, the critical thickness of the two-dimensional (2D) Si1âxâyGexCy growth could be increased.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 8, Issues 1â3, FebruaryâJune 2005, Pages 5-9
Journal: Materials Science in Semiconductor Processing - Volume 8, Issues 1â3, FebruaryâJune 2005, Pages 5-9
نویسندگان
Shotaro Takeuchi, Osamu Nakatsuka, Yasunobu Wakazono, Akira Sakai, Shigeaki Zaima, Yukio Yasuda,