کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9699130 1461440 2005 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Vertical SiGe-based silicon-on-nothing (SON) technology for sub-30 nm MOS devices
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Vertical SiGe-based silicon-on-nothing (SON) technology for sub-30 nm MOS devices
چکیده انگلیسی
A new device concept is introduced, the vertical silicon-on-nothing field-effect transistor. The “nothing” region is obtained by the selective removal of an epitaxial SiGe layer. Both the channel length and the gate width are determined by epitaxial deposition, and are not limited by lithography. Since there is “nothing” under the gate, the device should be suitable for operation in high-radiation environments. By estimating the gate overlap, we predict an ultimate FT of 100 GHz. Initial devices in bridge, trench, and cantilever configurations are shown. In the first device fabrication, the choice of SiO2 for the gate dielectric resulted in the formation of parasitic transistors that dominated the electrical performance.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 8, Issues 1–3, February–June 2005, Pages 51-57
نویسندگان
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