کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9699156 | 1461440 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Strained silicon on insulator (SSOI) by waferbonding
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موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Strained silicon on insulator (SSOI) by waferbonding Strained silicon on insulator (SSOI) by waferbonding](/preview/png/9699156.png)
چکیده انگلیسی
Strained silicon devices provide for an enhanced carrier mobility compared to that of unstrained silicon devices of identical dimensions. The device performance gets even better when using strained silicon on insulator material. We report experimental procedures based on wafer bonding, smart cutting and selective chemical etching to obtain thin strained silicon (â¼15 nm) on insulator wafers. The starting material is an 8â³ wafer with pseudomorphically grown strained silicon on a so-called virtual substrate as realized by epitaxial chemical vapor deposition of relaxed SiGe (grown with a grading rate of 10% Ge in the SiGe-alloy per 1 μm layer deposition) on a Si(0 0 1) substrate. The starting and bonded wafers are characterized: (i) structurally using transmission electron microscopy, (ii) topographically, using atomic force microscopy and (iii) the strain is quantified using UV-Raman spectroscopy.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 8, Issues 1â3, FebruaryâJune 2005, Pages 197-202
Journal: Materials Science in Semiconductor Processing - Volume 8, Issues 1â3, FebruaryâJune 2005, Pages 197-202
نویسندگان
S.H. Christiansen, R. Singh, I. Radu, M. Reiche, U. Gösele, D. Webb, S. Bukalo, B. Dietrich,