کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9699178 1461440 2005 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
3-W SiGe power HBTs for wireless applications
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
3-W SiGe power HBTs for wireless applications
چکیده انگلیسی
High-performance SiGe power HBTs are developed using 4-metal industry SiGe BiCMOS platform for 1.9 GHz portable wireless communications. The values of ballasting resistors are carefully selected to ensure thermally stable operation of these devices at high power levels. Three-Watt RF power with concurrent 67% PAE and power gain of 9.8 dB is achieved from 0.9 μm emitter finger power SiGe HBTs, resulting in a RF power density of 1.13 mW/μm2. The power performance of these devices under different bias conditions are also studied. These results show the great potential of SiGe HBTs for on-chip high-power amplifications.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 8, Issues 1–3, February–June 2005, Pages 323-326
نویسندگان
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