کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9699183 | 1461440 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Source engineering in short channel double gate vertical SiGe-MOSFETs
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موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Transistor channel lengths are being continually scaled to smaller dimensions to improve the high-frequency performance and package density, which will lead to the introduction of sub-50Â nm gate lengths in production in the near future. In this paper, the performance of a double gate (DG) vertical metal oxide semiconductor field effect transistor (MOSFET) using strained-SiGe as the channel has been analyzed using simulation. The advantages of the band gap engineering and the vertical structure are shown in terms of (a) independence of channel length, (b) independence of source-drain bias, (c) improved device characteristics (lower off-current), (d) reduction of short channel effects, and (e) suitability for low-power operation.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 8, Issues 1â3, FebruaryâJune 2005, Pages 353-357
Journal: Materials Science in Semiconductor Processing - Volume 8, Issues 1â3, FebruaryâJune 2005, Pages 353-357
نویسندگان
S.K. Mandal, S. Das, C.K. Maiti,