Noise behavior of SiGe n-MODFETS

This paper presents an investigation of the low-frequency noise properties of SiGe-based on n-MODFETs through the characterization of both the gate current noise and the drain current noise, including their correlation. Measurements vs. bias and gate geometry have shown that this noise is generated through mobility fluctuations or carrier diffusion at the gate terminal when carrier number fluctuations are involved for drain current fluctuations. Residual phase noise measurements have shown that the up-conversion effect mainly occurs on the drain current noise.