کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9760335 | 1498046 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electrochemical and structural properties of V2O5 thin films prepared by DC sputtering
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
الکتروشیمی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Electrochemical and structural properties of V2O5 thin films prepared by DC sputtering Electrochemical and structural properties of V2O5 thin films prepared by DC sputtering](/preview/png/9760335.png)
چکیده انگلیسی
Vanadium pentoxide thin films have been prepared by reactive DC magnetron sputtering from a vanadium metal target without annealing posttreatment. XRD, Raman and electrochemical experiments on 800 nm thin films show a high crystallinity of the deposits. Chronopotentiometric measurements performed in the two voltage range 3.8-2.8 and 3.8-2.15 V have demonstrated the promoting effect of the h 0 0 preferred orientation of V2O5 films in terms of polarization, kinetics and rate capability. The same reproducible deposition method is successfully applied to get films thicker than 1 μm in order to optimize the specific capacity. Effective high specific capacities can be then obtained with films 2.4 μm thick tested at high constant current density (100 μA cmâ2): a stable capacity of 75 μAh cmâ2 is available over 100 cycles in the 3.8-2.8 V potential range and 130 μAh cmâ2 are still recovered in the range 3.8-2.15 V. These results indicate a promising cycling behaviour can be expected with thick films exhibiting a preferred orientation corresponding to V2O5 planes perpendicular to the substrate.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Power Sources - Volume 146, Issues 1â2, 26 August 2005, Pages 327-330
Journal: Journal of Power Sources - Volume 146, Issues 1â2, 26 August 2005, Pages 327-330
نویسندگان
C. Navone, J.P. Pereira-Ramos, R. Baddour-Hadjean, R. Salot,