کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9803405 | 1516466 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Diffuse X-ray scattering from misfit and threading dislocations in relaxed epitaxial layers
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Diffuse X-ray scattering from misfit and threading dislocations in relaxed epitaxial layers Diffuse X-ray scattering from misfit and threading dislocations in relaxed epitaxial layers](/preview/png/9803405.png)
چکیده انگلیسی
A statistical theory of X-ray scattering from dislocations oriented parallel or perpendicular to the surface in semiconductor thin film is presented. We apply this theory to two particular cases. At first, we derive formulae for diffusively scattered X-ray intensity from screw threading dislocations in GaN thin film in high-density approximation. Correlation in dislocation positions is involved in calculations. Diffuse X-ray scattering is calculated in case of PbTe thin films with various thicknesses in the second case. From the fit, the dislocation density was determined.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 401, Issues 1â2, 29 September 2005, Pages 217-220
Journal: Journal of Alloys and Compounds - Volume 401, Issues 1â2, 29 September 2005, Pages 217-220
نویسندگان
S. Daniš, V. Holý,