کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9803408 | 1516466 | 2005 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The structures prepared by high temperature-pressure treatment of Cz-Si heavily implanted with He+
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Structure of Czochralski grown silicon heavily implanted with He+ (dose 1Â ÃÂ 1017Â cmâ2, energy 150Â keV) and processed at up 1400Â K under enhanced hydrostatic pressure (HP, up to 1.1Â GPa) for up to 10Â h was studied by X-ray diffuse scattering and photoluminescence measurements. Enhanced pressure affects the microstructure of Si:He; the type and concentration of defects in Si:He are dependent on processing parameters. In particular, HP affects the creation of dislocations, especially for the treatments at 920-1270Â K. The retarded helium out-diffusion under HP is responsible in part for the effects observed. Calculations based on the density functional theory confirm that the formation energy of vacancies in Si is reduced by the presence of He and by enhanced pressure.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 401, Issues 1â2, 29 September 2005, Pages 231-237
Journal: Journal of Alloys and Compounds - Volume 401, Issues 1â2, 29 September 2005, Pages 231-237
نویسندگان
J. Bak-Misiuk, A. Misiuk, A. Shalimov, B. Surma, V.G. Zavodinsky, A.A. Gnidenko, B. Lament-BiaÅek, A. Wnuk,