کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9829287 1524487 2005 9 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Structure and thermal stability of InAs/GaAs quantum dots grown by atomic layer epitaxy and molecular beam epitaxy
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Structure and thermal stability of InAs/GaAs quantum dots grown by atomic layer epitaxy and molecular beam epitaxy
چکیده انگلیسی
The structure and thermal stability of self-assembled InAs/GaAs quantum dots (QDs) grown by atomic layer epitaxy (ALE) and molecular beam epitaxy (MBE) QDs were studied using high-resolution electron microscopy with in situ heating experiment capabilities. The ALE QDs were larger and more regular shaped than MBE QDs because of the higher diffusivity of In compared with that of InAs in MBE growth. The QDs were found to form a lens-shaped structure with side facets in the early stage of growth. Upon capping with a GaAs layer, however, the QD apexes flattened because of the diffusion of In and As from the QDs. The structural behavior of QDs at elevated temperatures was observed directly on the atomic scale by in situ heating experiments within TEM. The in situ high-resolution electron microscopy revealed that the uncapped ALE and MBE QDs remained stable up to 580 °C. However, above 600 °C, the QDs collapsed due to the diffusion and evaporation of In and As from the QDs.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 285, Issues 1–2, 15 November 2005, Pages 137-145
نویسندگان
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