کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9829310 1524488 2005 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Optical properties of digital-alloy In0.49(Ga1−zAlz)0.51P/GaAs and InGaP/In0.49(Ga1−zAlz)0.51P multi-quantum wells grown by molecular-beam epitaxy
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Optical properties of digital-alloy In0.49(Ga1−zAlz)0.51P/GaAs and InGaP/In0.49(Ga1−zAlz)0.51P multi-quantum wells grown by molecular-beam epitaxy
چکیده انگلیسی
Optical properties of digital-alloy InGaAlP and InGaP/InGaAlP multiple-quantum wells (MQWs) grown by molecular beam epitaxy were characterized by 300 and 10 K-photoluminescence (PL). For digital-alloy In0.49(Ga1−zAlz)0.51P grown at 425 °C with z=0.2, 0.4, and 0.5, the energies of PL peak were in the range 2.0-2.167 eV. As the growth temperature increased from 425 to 470 °C for the digital-alloy In0.49(Ga0.6Al0.4)0.51P, the intensity of PL peak increased 2.5 times. However, the energy and line width of PL spectrum did not change significantly. The L peak at 2.148 eV and the H peak at 2.189 eV from 8 K-PL were also observed and the intensity ratios of L peak to H peak (IL/IH) were 0.046, 0.048, and 0.043 for 425, 450, and 475 °C, respectively. For the digital-alloy InGaP/InGaAlP MQW structure grown at 450 °C, PL peak energy of 1.911 eV and PL line width of 38 meV were obtained successfully. The band gap and compositions of InGaAlP were easily controlled by digital-alloy technique without degrading the crystal quality.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 284, Issues 3–4, 1 November 2005, Pages 335-340
نویسندگان
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