Growth interface of CdZnTe grown from Te solution with THM technique under static magnetic field

The growth interface of CdZnTe crystals grown from Te solution with the THM technique under static magnetic field was investigated by a quenching technique during crystal growth. The results indicated that the growth interface obtained with a growth rate of 4 mm/day under magnetic induction of 3 T was improved greatly during solidification, as was the micro-structure of CdZnTe crystals.