کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9829431 | 1524491 | 2005 | 16 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Modelling the effects of the pressure changes in the case of the growth of a thin sheet in an edge-defined film-fed growth (EFG) System
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this paper it is shown that due to the pressure p in the furnace there are three limitations
αc_,
αc¯,
αc¯¯ for the contact angle
αc. The lower limit
αc_ is in the range
(0,Ï/2-αe), depends on p and on the half-thickness w of the die. The upper limit
αc¯ is in the range (
Ï/2-αe,Ï/2) and increases when p increases. The limit
αc¯¯ is in the range
(Ï/2-αe,αc¯) and depends on p and w. It is shown also, that there exist two limitations w1(p) and w2(p) for w. If w is in the range (0, w1(p)), then the growth angle is achieved for the contact angle in the range
(Ï/2-αe,αc¯¯), and if
wâ(w1(p),w2(p)) the growth angle is achieved for the contact angle in the range
(Ï/2-αe,αc¯). The menisci are concave. If
w>w2(p), then the growth angle is achieved for the contact angle in the range
(αc_,αc¯) and the meniscus is convex-concave. Numerical examples are given for thin silicon sheets of half-thickness
0.5(cmÃ10-2).
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 283, Issues 1â2, 15 September 2005, Pages 15-30
Journal: Journal of Crystal Growth - Volume 283, Issues 1â2, 15 September 2005, Pages 15-30
نویسندگان
St. Balint, L. Braescu, A.M. Balint, R. Szabo,