Liquid phase homoepitaxial growth of 6H-SiC on (011¯5) oriented substrates

Liquid phase epitaxy (LPE) of SiC from a diluted Si-based melt was performed on wafers with (011¯5) orientation on physical vapor transport (PVT) grown 6H-SiC. Epitaxial growth on (011¯5) substrates occurred by a step flow mode, producing mirror-like homoepitaxial SiC layers. Using the method of horizontal dipping, layers with a thickness up to 12 μm were grown on (011¯5) Si-side, with a growth rate of about 0.2 μm/h. The roughness of the deposited layer was about 10 nm, comparable with the as-polished state of the processed seed. However, the epitaxial growth on (011¯5) C-side showed a completely different growth morphology. Rough surface with large islands showing a pronounced step bunching developed on C-side with a growth rate of about 1 μm/h.