کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9829503 | 1524493 | 2005 | 11 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Ga assisted in situ etching of AlGaInAs and InGaAsP multi quantum well structures using tertiarybutylchloride
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this work, we present studies on the in situ etching (ISE) technique using tertiarybutylchloride (TBCl) as etchant precursor in a metal organic vapour phase epitaxy (MOVPE) reactor. Experiments were made in PH3 and PH3-free environments at low pressures (50-100 mbar) and in a low-temperature regime (545-600 °C). In particular, the combination of standard reactive ion etching (RIE) and ISE for the realization of suitable mesa structures for device applications has been systematically investigated. In our etching experiments InP, InGaAsP and Al-containing multi quantum wells (MQWs) have been used as etching targets. Particular efforts were devoted to the etching of Al-containing structures. For this material, the addition of trimethylgallium (TMGa) during the etching resulted to be of key importance in providing good surface morphology and etching of the MQW structure. The role of Ga species in the etching mechanisms will be discussed. The dependence of surface morphology and mesa shape on etching conditions, in particular, temperature, chlorine concentration, gallium concentration and etching time, will be described.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 282, Issues 1â2, 15 August 2005, Pages 7-17
Journal: Journal of Crystal Growth - Volume 282, Issues 1â2, 15 August 2005, Pages 7-17
نویسندگان
S. Codato, R. Campi, C. Rigo, A. Stano,