کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9829516 | 1524493 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Photoluminescence of ZnO films grown by plasma-assisted molecular beam epitaxy
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Photoluminescence (PL) of homoepitaxial and heteroepitaxial ZnO films grown by plasma-assisted molecular beam epitaxy is studied. Homoepitaxial ZnO layers were grown on an O-face melt-grown ZnO (0Â 0Â 0Â 1) substrate. Heteroepitaxial ZnO layers were grown on an epitaxial GaN template predeposited by metalorganic chemical vapor deposition on a c-plane sapphire substrate. The low-excitation PL spectra of ZnO epilayers excited by a He-Cd laser exhibit only bound-exciton emission with phonon replicas. There are green luminescence from the ZnO substrate but not from the ZnO epilayers. However, under high-excitation by a N2 pulse laser, the emission due to exciton-exciton scattering dominates the PL spectrum from the heteroepitaxial ZnO layer but is not observed from the homoepitaxial ZnO layer. The difference is probably due to the different quality of the ZnO substrate and GaN template.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 282, Issues 1â2, 15 August 2005, Pages 112-116
Journal: Journal of Crystal Growth - Volume 282, Issues 1â2, 15 August 2005, Pages 112-116
نویسندگان
C.J. Pan, C.W. Tu, J.J. Song, G. Cantwell, C.C. Lee, B.J. Pong, G.C. Chi,