کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9829547 | 1524494 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Strain relaxation mechanism in SiGe-on-insulator fabricated by Ge condensation
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Relaxed SiGe-on-Insulator (SGOI) is fabricated using a modified fabrication technique based on Ge condensation by oxidizing the SiGe layer on SOI. In this procedure, the Ge atoms are condensed into the remaining SiGe layer due to the rejection of Ge atoms from the oxide layer and the large diffusion coefficient of Ge in SiGe. Raman measurements reveal that the strain in the SiGe layer is fully relaxed at high oxidation temperature (â¼1150°C). Atomic force microscopy (AFM) and transmission electron microscopy (TEM) results indicate that no dislocation is introduced for strain relaxation during the oxidation process. The strain relaxation is explained by a relaxation model involving a compliant substrate, on which the SiGe layer expands laterally via an ultra-low viscosity slippage plane at the SiGe/buried oxide (BOX) interface.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 281, Issues 2â4, 1 August 2005, Pages 275-280
Journal: Journal of Crystal Growth - Volume 281, Issues 2â4, 1 August 2005, Pages 275-280
نویسندگان
Zengfeng Di, Anping Huang, Paul K. Chu, Miao Zhang, Weili Liu, Zhitang Song, Suhua Luo, Chenglu Lin,