کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9829553 | 1524494 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A study of the correlation between nickel and the ultraviolet emission in SiOx films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this study, we have investigated the correlation between nickel and ultraviolet emission in SiOx (x<2) films. Due to the presence of nickel, the maximum intensity of UV emission was obtained after annealing at 800 °C, which was explained by the formation of oxygen excess defects in the oxireduction reaction between Ni and SiOx. The intensity of ultraviolet emission increases by annealing in oxygen because the process of oxidation is benefit to the formation of oxygen excess defects. The mean size of SiO2 clusters increases with the increase of annealing temperature, which is characterized by scanning electron microscopy and energy dispersive spectroscopy analysis. An oxireduction reaction model was proposed to explain the correlation between nickel and ultraviolet emission in this system.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 281, Issues 2â4, 1 August 2005, Pages 318-322
Journal: Journal of Crystal Growth - Volume 281, Issues 2â4, 1 August 2005, Pages 318-322
نویسندگان
Y. He, J.Y. Feng, Q.L. Wu,