کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9829568 | 1524494 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Nd:GdVO4 thin films grown on La3Ga5SiO14 (LGS) and sapphire substrates by pulsed laser deposition properties
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Nd-doped gadolinium vanadate (Nd:GdVO4) films have been grown on La3Ga5SiO14 (LGS) and sapphire substrates by pulsed laser deposition for the purpose of fabricating diode-pumped waveguide lasers. Films were grown over a range of temperatures from 600 to 700 °C in the presence of an oxygen pressure between 2 and 20 Pa. Films were characterized by X-ray diffraction, atomic force microscopy, and prism coupling method. Nd:GdVO4 films on different substrates show preferential growth along (2 0 0) with smooth surface. However, films fabricated on sapphire substrates have better crystallization quality compared with that on La3Ga5SiO14 (LGS) substrates according to the X-ray analysis. Films with sharper dips were observed on sapphire substrates in comparison with that on LGS substrates, which means a good confinement of the light in the corresponding mode.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 281, Issues 2â4, 1 August 2005, Pages 426-431
Journal: Journal of Crystal Growth - Volume 281, Issues 2â4, 1 August 2005, Pages 426-431
نویسندگان
Hongxia Li, Jiyang Wang, Huaijin Zhang, Guangwei Yu, Xiaoxia Wang, Liang Fang, Mingrong Shen, Zhaoyuan Ning, Jing Yang, Shiling Li, Xuelin Wang, Keming Wang,