کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9829615 | 1524495 | 2005 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Structural and photoluminescence characteristics of molecular beam epitaxy-grown vertically aligned In0.33Ga0.67As/GaAs quantum dots
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Structural and photoluminescence characteristics of molecular beam epitaxy-grown vertically aligned In0.33Ga0.67As/GaAs quantum dots Structural and photoluminescence characteristics of molecular beam epitaxy-grown vertically aligned In0.33Ga0.67As/GaAs quantum dots](/preview/png/9829615.png)
چکیده انگلیسی
In this paper, we present the results of structural and photoluminescence (PL) studies on vertically aligned, 20-period In0.33Ga0.67As/GaAs quantum dot stacks, grown by molecular beam epitaxy (MBE). Two different In0.33Ga0.67As/GaAs quantum dot stacks were compared. In one case, the In0.33Ga0.67As layer thickness was chosen to be just above its transition thickness, and in the other case, the In0.33Ga0.67As layer thickness was chosen to be 30% larger than its transition thickness. The 2D-3D growth mode transition time was determined using reflection high-energy electron diffraction (RHEED). Structural studies were done on these samples using high-resolution X-ray diffraction (HRXRD) and cross-sectional transmission electron microscopy (XTEM). A careful analysis showed that the satellite peaks recorded in X-ray rocking curve show two types of periodicities in one sample. We attribute this additional periodicity to the presence of an aligned vertical stack of quantum dots. We also show that the additional periodicity is not significant in a sample in which the quantum dots are not prominently formed. By analyzing the X-ray rocking curve in conjunction with RHEED and PL, we have estimated the structural parameters of the quantum dot stack. These parameters agree well with those obtained from XTEM measurements.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 280, Issues 3â4, 1 July 2005, Pages 378-384
Journal: Journal of Crystal Growth - Volume 280, Issues 3â4, 1 July 2005, Pages 378-384
نویسندگان
T. Srinivasan, S.N. Singh, Umesh Tiwari, R.K. Sharma, R. Muralidharan, D.V. Sridhara Rao, R. Balamuralikrishnan, K. Muraleedharan,