کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9829620 1524495 2005 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Growth of multicrystalline Si with controlled grain boundary configuration by the floating zone technique
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Growth of multicrystalline Si with controlled grain boundary configuration by the floating zone technique
چکیده انگلیسی
The floating zone technique was employed to grow multicrystalline Si with controlled grain boundary configuration. Purposely designed bi-crystals were utilized as seed crystals to investigate the effect of the tilt angle from the perfect twin boundary on the growth behavior. When the growth was initiated from a bi-crystal with a Σ3 twin boundary, no particular change took place on the grain boundary configuration during growth. On the other hand, the decrease of the tilt angle during growth was observed when the growth was initiated from a bi-crystal with a tilted boundary from Σ3. This was accompanied by the appearance of new crystal grains. The reduction of the total interface energy would be a possible driving mechanism for this phenomenon.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 280, Issues 3–4, 1 July 2005, Pages 419-424
نویسندگان
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