کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9829640 | 1524495 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Synthesis and characteristics of Na-doped Bi4Ti3O12 thin films on Si substrate
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Synthesis and characteristics of Na-doped Bi4Ti3O12 thin films on Si substrate Synthesis and characteristics of Na-doped Bi4Ti3O12 thin films on Si substrate](/preview/png/9829640.png)
چکیده انگلیسی
Bi3.25Na2.25Ti3O12 thin films were prepared on p-Si(1Â 1Â 1) substrate by a metalorganic solution decomposition (MOSD) method. The structural characteristic and crystallization of the films were examined by X-ray diffraction. The current-voltage characteristic shows ohmic conductivity in the lower voltage range and space-charge-limited conductivity in the higher voltage range. The dielectric constant is 53 at a frequency of 100Â kHz at room temperature and the dissipation factor exists at a minimal value of 0.02 at a frequency of 200Â kHz. The retention time estimated by measuring capacitance is about 106Â s. Nonhysteretic C-V curves at various frequencies were also collected.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 280, Issues 3â4, 1 July 2005, Pages 557-561
Journal: Journal of Crystal Growth - Volume 280, Issues 3â4, 1 July 2005, Pages 557-561
نویسندگان
Zh. Wang, Ch.H. Yang, X.Y. Yu, T. Yu,