کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9829666 | 1524496 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
High-quality GaInAs/AlAsSb quantum cascade lasers grown by molecular beam epitaxy in continuous growth mode
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
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چکیده انگلیسی
Short wavelength (λ<5 μm) quantum cascade lasers are of current interest as they operate in the technologically important atmospheric 3-5 μm transparency window. For this wavelength range the GaInAs/AlAsSb-on-InP material system offers the advantage of a large conduction band offset of about 1.6 eV over the well-established lattice-matched GaInAs/AlInAs-on-InP material combination with a band offset of only 0.5 eV. In this paper, we report on molecular beam epitaxial growth and subsequent structural and compositional analysis of GaInAs/AlAsSb quantum wells as well as quantum cascade laser structures. Special emphasis has been laid on establishing a growth procedure which allows the growth of these structures without growth interruption at the GaInAs/AlAsSb interfaces. The epitaxial layer sequences were analyzed by high-resolution X-ray diffraction, secondary ion mass spectrometry, and transmission electron microscopy. Finally, mesa waveguide GaInAs/AlAsSb QC lasers were fabricated emitting around 4.5 μm, which could be operated in pulsed mode up to 400 K.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 280, Issues 1â2, 15 June 2005, Pages 75-80
Journal: Journal of Crystal Growth - Volume 280, Issues 1â2, 15 June 2005, Pages 75-80
نویسندگان
C. Manz, Q. Yang, K. Köhler, M. Maier, L. Kirste, J. Wagner, W. Send, D. Gerthsen,