کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9829701 1524496 2005 11 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Heterostructures GexSi1−x/Si(0 0 1) grown by low-temperature (300-400 °C) molecular beam epitaxy: Misfit dislocation propagation
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Heterostructures GexSi1−x/Si(0 0 1) grown by low-temperature (300-400 °C) molecular beam epitaxy: Misfit dislocation propagation
چکیده انگلیسی
The dislocation velocity is estimated by the measuring of the length of misfit dislocations observed in annealed films. Additionally a method for estimating the mean threading dislocation glide velocity is used, which involves the measured threading dislocation density in a particular film and degree of its plastic relaxation directly related to the number of threading dislocations and their glide velocity. It is shown that dislocation glide velocities in heterostructures grown with the use of the low-temperature Si buffer and at low-temperatures are higher than the values predicted by the classical calculations by an order of magnitude.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 280, Issues 1–2, 15 June 2005, Pages 309-319
نویسندگان
, , , , ,