کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9829712 | 1524497 | 2005 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Rapid synthesis of gallium nitride powder
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
The synthesis of high purity, single-phase gallium nitride (GaN) powder has been achieved through the reaction between molten Ga and ammonia (NH3) using Bi as a catalyst. In this simple apparatus, 25 g Ga can be fully, stoichiometrically converted into GaN within 5 h. The optimum temperature, NH3 flow rate and reaction time in this hot wall tube furnace were 1000 °C, 500 standard cubic centimeters per minute (sccm) and 5 h, respectively. The synthesized powder was characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), glow discharge mass spectrometry (GDMS), Raman spectroscopy, and cathodoluminescence (CL). All of these techniques indicated high purity, hexagonal polycrystalline GaN with 1-20 μm across plate like grains.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 279, Issues 3â4, 1 June 2005, Pages 303-310
Journal: Journal of Crystal Growth - Volume 279, Issues 3â4, 1 June 2005, Pages 303-310
نویسندگان
Huaqiang Wu, Janet Hunting, Kyota Uheda, Lori Lepak, Phanikumar Konkapaka, Francis J. DiSalvo, Michael G. Spencer,