کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9829730 | 1524497 | 2005 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Investigation on small growth pits in 4H silicon carbide epilayers
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Using a polarized light microscope (PLM) and AFM, various growth pits associated with crystallographic defects in 4H silicon carbide (SiC) epilayer have been extensively investigated. Defects, including screw dislocations, grain boundaries, and edge dislocations, open growth pits of various shapes in the SiC epilayer surface. For the investigated high-quality commercial SiC wafers, the relationship between crystallographic defects and various growth pits has been established. In 10-μm-thick epilayers, the previously reported small triangular growth pits can be further classified into growth pits with or without nano-cores. The growth pits with nano-cores are associated with screw dislocations while the growth pits without nano-cores are mainly observed in the highly stressed regions of the crystal. The grain boundaries result in growth-pit arrays, while the edge dislocations lead to shallow stripe-shaped growth pits in 10-μm-thick epilayers and growth pits with small nano-cores in 100-μm-thick epilayers. The possible influence of sharp-apex growth pits on SiC device performance has also been discussed in this study.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 279, Issues 3â4, 1 June 2005, Pages 425-432
Journal: Journal of Crystal Growth - Volume 279, Issues 3â4, 1 June 2005, Pages 425-432
نویسندگان
Xianyun Ma, Hsuehrong Chang, Qingchun Zhang, Tangali Sudarshan,