Growth and structural properties of rocksalt MnSe/GaAs epilayer by hot-wall epitaxy

α-MnSe epilayers were grown on (1 0 0) GaAs substrates by hot-wall epitaxy and their structural characteristics were studied. X-ray diffraction (XRD) and double crystal rocking curve measurements revealed that the epilayer is a homogeneous layer of MnSe with a rocksalt structure in the (1 0 0) direction. Asymmetric XRD revealed that biaxial tensile strain remained in a 200 nm thick α-MnSe epilayer.