کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9829782 | 1524499 | 2005 | 13 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Spintronics: recent progress and tomorrow's challenges
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
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چکیده انگلیسی
This article reviews the recent advances of epitaxial ferromagnetic thin films and heterostructures as well as devices towards semiconductor-based spin-electronics or often called spintronics. We review the developments of III-V based ferromagnetic thin films and heterostructures grown by molecular beam epitaxy, with focus on the Mn-delta-doped GaAs/p-AlGaAs heterostructures with high ferromagnetic transition temperature, and control of the spin-dependent properties. As a new direction in spintronics research, we present our recent study on a new silicon-based spin device, spin metal-oxide-semiconductor field-effect transistor (spin MOSFET), and novel reconfigurable or reprogrammable logic gates using spin MOSFETs, which are compatible with the current CMOS technology and promising for reconfigurable computing.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 278, Issues 1â4, 1 May 2005, Pages 25-37
Journal: Journal of Crystal Growth - Volume 278, Issues 1â4, 1 May 2005, Pages 25-37
نویسندگان
Masaaki Tanaka,