کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9829790 | 1524499 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Ordering of self-assembled Si0.55Ge0.45 islands on vicinal Si(0Â 0Â 1) substrates
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Ordering of self-assembled Si0.55Ge0.45 islands on vicinal Si(0Â 0Â 1) substrates Ordering of self-assembled Si0.55Ge0.45 islands on vicinal Si(0Â 0Â 1) substrates](/preview/png/9829790.png)
چکیده انگلیسی
The slightly vicinal Si(0Â 0Â 1) surface is intrinsically unstable against kinetic-step bunching during homoepitaxial growth. The height and period of the step bunches depend on miscut angle, growth temperature, growth rate and epilayer thickness. Using substrates with 4â miscut along [1Â 1Â 0] we optimised our MBE-grown Si-buffers to show one-dimensional step bunches with a typical spacing of 100Â nm, and a corrugation height of 4Â nm. These Si buffers were capped by 50Â Ã
of Si0.55Ge0.45, which was grown at various temperatures. Only at very low temperatures around 350Â âC, the Si0.55Ge0.45 film replicates the underlying ripples of the Si-buffer in a conformal manner. At moderate growth temperatures the stress in the top-layer leads to the formation of {1Â 0Â 5}-faceted ridges at the ripple flanks perpendicular to the main structure. This marks the transition from conformal Si/SiGe epilayer growth to strain-driven three-dimensional (3D) island growth for temperatures above 600Â âC. The experiments clearly demonstrate that a reduction of the step-bunch spacing to a value approaching the average spacing of the Si0.55Ge0.45 islands under the chosen growth conditions couples the two otherwise independent mechanisms of kinetic (homoepitaxial) step bunching and of strain-induced 3D island growth. This way, long-range ordering of self-organised SiGe dots is achieved that is entirely based on self-organisation phenomena.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 278, Issues 1â4, 1 May 2005, Pages 78-82
Journal: Journal of Crystal Growth - Volume 278, Issues 1â4, 1 May 2005, Pages 78-82
نویسندگان
H. Lichtenberger, M. Mühlberger, C. Schelling, F. Schäffler,