کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9829814 | 1524499 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Molecular beam epitaxy of AlInAsSb alloys near the miscibility gap boundary
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
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چکیده انگلیسی
AlxIn1âxAsySb1ây alloys lattice matched to InAs with an Al content up to x=0.25 have been grown by molecular beam epitaxy on InAs (0 0 1) substrates and studied by double-crystal X-ray diffraction, scanning electron microscopy and photoluminescence (PL) spectroscopy. Thermodynamic stability of these alloys at typical MBE temperatures has been revised. It has been found that AlInAsSb alloys with xâ¼0.15, grown at temperatures below 470 °C, exhibit spinodal decomposition in good agreement with the calculated chemical instability gap boundary. However, the alloys with xâ¼0.2 grown at higher temperature (above 500 °C) have exhibited no decomposition features and demonstrate bright PL at 80 K.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 278, Issues 1â4, 1 May 2005, Pages 203-208
Journal: Journal of Crystal Growth - Volume 278, Issues 1â4, 1 May 2005, Pages 203-208
نویسندگان
A.N. Semenov, V.A. Solov'ev, B.Ya. Meltser, Ya.V. Terent'ev, L.G. Prokopova, S.V. Ivanov,