کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9829831 | 1524499 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Molecular beam epitaxial growth of wide bandgap ZnMgO alloy films on (1Â 1Â 1)-oriented Si substrate toward UV-detector applications
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Single-phase wurtzite Zn1âxMgxO alloy films with 0⩽x⩽0.45 were successfully grown on (1 1 1)-oriented Si substrates by molecular beam epitaxy. Although the Zn1âxMgxO alloy films with x>0.3 exceeded the solid solubility limit at 600 °C, the growth at lower temperatures was found to be effective to raise the limit up to x=0.45. Both energies of the cathodoluminescence peak and optical absorption edge showed continuous blueshifts with increasing the x value till the solubility limit, although the shift of the former energy became shorter than that of the latter one presumably due to the spatial inhomogeneity in alloy films. Photoresponse measurement for Zn1âxMgxO/Si photoconduction cells revealed visible-blind characteristics with specific cutoff wavelengths in accordance with relevant bandgap energies to their x values.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 278, Issues 1â4, 1 May 2005, Pages 288-292
Journal: Journal of Crystal Growth - Volume 278, Issues 1â4, 1 May 2005, Pages 288-292
نویسندگان
Kazuto Koike, Kenji Hama, Ippei Nakashima, Gen-you Takada, Ken-ichi Ogata, Shigehiko Sasa, Masataka Inoue, Mitsuaki Yano,