کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9829839 | 1524499 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Molecular beam epitaxy growth of quantum dot lasers emitting around 1.5 μm on InP(3 1 1)B substrates
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We present a modified growth procedure used to control the emission wavelength of InAs quantum dots in a GaInAsP matrix grown on InP(3 1 1)B substrates by gas source molecular beam epitaxy. In this procedure, the quantum dots are grown on a GaInAsP buffer layer and partially capped with the same GaInAsp alloy. Then As/P exchanges during a growth interruption are used in order to reduce quantum dots height and thus to control the emission wavelength. Two GaInAsP quaternary alloys composition have been studied in this work. Both could be used as optical waveguide in 1.55 μm laser diodes. We present and compare photoluminescence results on test structures with these two quaternary alloys. Finally, the new growth procedure is successfully applied and we demonstrate a quantum dot laser emission at 1.58-1.61 μm at 300 K.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 278, Issues 1â4, 1 May 2005, Pages 329-334
Journal: Journal of Crystal Growth - Volume 278, Issues 1â4, 1 May 2005, Pages 329-334
نویسندگان
P. Caroff, C. Platz, O. Dehaese, C. Paranthoën, N. Bertru, A. Le Corre, S. Loualiche,