Keywords: A1 ساختارهای کم حجم; A1. Low-dimensional structures; A1. Morphological stability; A1. Defects; A1. Computer simulation; B1. Nanomaterials;
مقالات ISI A1 ساختارهای کم حجم (ترجمه نشده)
مقالات زیر هنوز به فارسی ترجمه نشده اند.
در صورتی که به ترجمه آماده هر یک از مقالات زیر نیاز داشته باشید، می توانید سفارش دهید تا مترجمان با تجربه این مجموعه در اسرع وقت آن را برای شما ترجمه نمایند.
در صورتی که به ترجمه آماده هر یک از مقالات زیر نیاز داشته باشید، می توانید سفارش دهید تا مترجمان با تجربه این مجموعه در اسرع وقت آن را برای شما ترجمه نمایند.
Single crystal growth of spin-ladder compound La8Cu7O19 by the travelling-solvent floating zone method
Keywords: A1 ساختارهای کم حجم; A2. Single crystal growth; A2. Floating zone technique; A2. Travelling solvent zone growth; A1. Low-dimensional structures; A1. Characterization
Quantum dots and quantum dashes in the narrow-gap InSb/InAsSbP system
Keywords: A1 ساختارهای کم حجم; A1. Atomic force microscopy; A1. Low-dimensional structures; A3. Liquid phase epitaxy; A3. Metalorganic vapor phase epitaxy; B1. Antimonides; B3. Semiconducting indium compounds;
Growth of InGaAs/GaNAs strain-compensated quantum dot superlattice on GaAs (3Â 1Â 1)B by molecular beam epitaxy
Keywords: A1 ساختارهای کم حجم; 81.05.Ea; 81.07.Ta; 81.15.Hi; 81.16.Dn; A1. Low-dimensional structures; A3. Molecular beam epitaxy; B2. Semiconducting III-V materials;
Improving size distribution of InAs quantum dots for intersubband devices
Keywords: A1 ساختارهای کم حجم; 81.07.Ta; 68.55.ag; 81.15.Hi; 81.16.Dn; 73.21.La; 78.67.Hc; A1. Low-dimensional structures; A1. Nanostructures; A1. Surface structure; A3. Molecular beam epitaxy; B1. Arsenates; B2. Semiconducting III-V materials;
Growth and fabrication of quantum dots superluminescent diodes using the indium-flush technique: A new approach in controlling the bandwidth
Keywords: A1 ساختارهای کم حجم; A1. Low-dimensional structures; A2. Nanomaterials; A3. Molecular beam epitaxy; B2. Semiconducting gallium arsenide
Nanohole formation on AlGaAs surfaces by local droplet etching with gallium
Keywords: A1 ساختارهای کم حجم; 68.47.Fg; 81.05.Ea; 81.15.Hi; 81.16.DnA1. Atomic force microscopy; A1. Diffusion; A1. Low-dimensional structures; A3. Molecular beam epitaxy; B2. Semiconducting III–V materials
Strained quantum wells in scrolled structures studied by μ-photoluminescence
Keywords: A1 ساختارهای کم حجم; 78.67.De; 81.15.Hi; A1. Curved semiconducting layer stacks; A1. Low-dimensional structures; A3. Molecular beam epitaxy; A3. Quantum wells; B2. Semiconducting III-V materials;
Micro-emulsion synthesis of blue-luminescent silicon nanoparticles stabilized with alkoxy monolayers
Keywords: A1 ساختارهای کم حجم; A1. Interface; A1. Low-dimensional structures; A1. Nucleation; A1. Surfaces; A2. Growth from solutions; B1. Nanomaterials
Formation of Ge nanoislands before the completion of a wetting layer in the Ge/Si(1Â 1Â 1) system
Keywords: A1 ساختارهای کم حجم; 63.22.Kn; 68.37.Ef; 81.07.Bc; 81.15.Hi; A1. Low-dimensional structures; A1. Stresses; A1. Surface structure; A3. Molecular beam epitaxy; B2. Semiconducting germanium;
From Te nanotubes to CoTe2 nanotubes: A general strategy for the formation of 1D metal telluride nanostructures
Keywords: A1 ساختارهای کم حجم; 81.07.−b; 61.46.Fg; 81.10.−h; 68.37.−dA1. Characterization; A1. Crystal morphology; A1. Low-dimensional structures; B1. Hydrothermal crystal growth
The reproducibility and transferability of a THz quantum cascade laser design between two MBE growth manufacturers’ platforms
Keywords: A1 ساختارهای کم حجم; 42.55.Px; 78.45.+h; 78.55.Cr; 81.15.HiA1. Intersubband; A1. Low-dimensional structures; A3. Molecular beam epitaxy; B2. semiconducting III–V materials; B3. Quantum cascade lasers; B3. Solid state lasers
Triethylenetetramine (TETA)-assisted synthesis, dynamic growth mechanism, and photoluminescence properties of radial single-crystalline ZnS nanowire bundles
Keywords: A1 ساختارهای کم حجم; 62.23.Hj; 61.46.Km; 61.82.FkA1. Crystal morphology; A1. Low-dimensional structures; B1. Nanomaterials; B2. Semiconducting materials
Shape of heteroepitaxial island determined by asymmetric detachment
Keywords: A1 ساختارهای کم حجم; 81.15.Aa; 68.43.Hn; 68.47.PeA1. Computer simulation; A1. Low-dimensional structures; A1. Morphological stability; A3. Molecular beam epitaxy; B1. Organic compounds
Growth of nanofibrous barium carbonate on calcium carbonate seeds
Keywords: A1 ساختارهای کم حجم; 81.07.âb; 81.10.Dn; A1. Low-dimensional structures; A2. Growth from solutions; A2. Seed crystals; B1. Barium compounds; B1. Minerals;
Layer-by-layer growth and island formation in CdSe/ZnSe heteroepitaxy
Keywords: A1 ساختارهای کم حجم; 81.15.Hi; 81.15.Aa; 78.67.Hc; 68.65.Hb; 68.65.Fg; 79.60.Jv; 68.37.Ps; A1. Atomic force microscopy; A1. Low-dimensional structures; A3. Molecular beam epitaxy; B3. Semiconducting II-VI materials;
Structural units of polycomponent melts modeled using diffraction, spectroscopy, and computation techniques
Keywords: A1 ساختارهای کم حجم; 61.20.Gy; 61.20.Qg; 61.46.+w; A1. Computer simulations; A1. Low-dimensional structures; A1. Raman spectroscopy; A1. Synchrotron diffraction; A2. Crystallization from melt; B1. Complex oxides;
(InP)5/(Ga0.47In0.53As)4 short-period superlattices waveguides for InAs quantum wires lasers
Keywords: A1 ساختارهای کم حجم; 42.55.Px; 73.21.Cd; 73.21.Hb; A1. Low-dimensional structures; A1. Nanostructures; A3. Molecular beam epitaxy; A3. Superlattices; B2. Semiconducting III-V materials; B3. Laser diodes;
Controlled growth and morphology evolution of urchin-like ZnO/MgO hierarchical structures
Keywords: A1 ساختارهای کم حجم; 81.07.−b; 81.10.BkA1. Growth models; A1. Low-dimensional structures; A3. Chemical vapor deposition process; B1. Oxides
Self-assembled quantum dot formation during the growth of In0.4Ga0.6As on GaAs(0Â 0Â 1) by metal-organic vapor phase epitaxy: The role of In segregation
Keywords: A1 ساختارهای کم حجم; 81.07.Ta; 81.05.Ea; 81.15.Gh; A1. Low-dimensional structures; A1. Nanostructures; A1. Segregation; A3. Metal-organic vapor phase epitaxy; B2. Semiconducting ternary compounds;
A facile templateless, surfactantless hydrothermal route to ultralong copper submicron wires
Keywords: A1 ساختارهای کم حجم; A1. Low-dimensional structures; A1. Nanostructures; A2. Hydrothermal crystal growth; B1. Metals; B1. Nanomaterials
Topologically linked crystals
Keywords: A1 ساختارهای کم حجم; 02.40.−k; 81.10.−hA1. Growth models; A1. Low-dimensional structures; A2. Growth from vapor; A2. Single crystal growth; B1. Inorganic compounds; B1. Sulfides
Realization of 1.3 μm InAs quantum dots with high-density, uniformity, and quality
Keywords: A1 ساختارهای کم حجم; 78.67.Hc; 81.07.Ta; A1. Low-dimensional structures; A3. Molecular beam epitaxy; B2. Semiconducting III-V materials; B3. Laser diodes;
A facile hydrothermal process of fabricating beta-Ag0.33V2O5 single-crystal nanowires
Keywords: A1 ساختارهای کم حجم; 61.82.Rx; 81.05.Bx; 81.10.Aj; 81.10.Dn; 85.40.Ux; 83.70A1. Crystal morphology; A1. Low-dimensional structures; A2. Hydrothermal crystal growth; B1. Nanomaterials; B1. Silver vanadate bronze
Highly reflective AlGaAsSb/InP Bragg reflector at 1.55 μm grown by MOVPE
Keywords: A1 ساختارهای کم حجم; 71.55.Eq; 42.55.Px; 81.15.Gh; 85.60.âq; A1. Crystal morphology; A1. Low-dimensional structures; A3. Metalorganic vapor-phase epitaxy; B1. Antimonides; B2. Semiconducting indium phosphide; B3. Heterojunction semiconductor devices;
MBE growth of wide band gap wurtzite MgZnO quasi-alloys with MgO/ZnO superlattices for deep ultraviolet optical functions
Keywords: A1 ساختارهای کم حجم; 68.65.+g; 78.40.Fy; 81.05.Dz; 81.15.Hi; A1. Low-dimensional structures; A2. Molecular beam epitaxy; A3. Superlattices; B1. Oxides; B2. Semiconducting II-VI materials;
Single-crystalline ZnO nanobelts by RF sputtering
Keywords: A1 ساختارهای کم حجم; 81.07.âb; 81.15.Cd; 81.16.âc; A1. Low-dimensional structures; A1. Nanostructures; A3. Physical vapor deposition processes; B1. Nanomaterials; B1. Oxides; B3. Semiconducting II-VI materials;
Optical evidences of ZnS0.78Te0.22 quantum dots formed in ZnTe matrix
Keywords: A1 ساختارهای کم حجم; 78.40.Fy; 78.66.Hf; A1. Low-dimensional structures; A3. Hot-wall epitaxy; B2. Semiconducting II-VI materials;
Orientation dependence behavior of self-assembled (In,Ga)As quantum structures on GaAs surface
Keywords: A1 ساختارهای کم حجم; 79.60.Jv; 85.30.Vw; 81.05.Ea; 81.15.Hi; A1. Low-dimensional structures; A1. Nanostructures; A1. Surface structure; A3. Molecular beam epitaxy;
InP-based quantum dash lasers for wide gain bandwidth applications
Keywords: A1 ساختارهای کم حجم; 42.55.Px; 85.60.Bt; A1. Low-dimensional structures; A3. Self-organized growth; A3. Molecular beam epitaxy; A3. Quantum dashes; B2. Semiconducting III-V materials; B3. Laser diodes;
Excitation power dependent photoluminescence of In0.7Ga0.3As1âxNx quantum dots grown on GaAs (0Â 0Â 1)
Keywords: A1 ساختارهای کم حجم; 78.67.Hc; 81.15.Hi; 81.05.Ea; A1. Low-dimensional structures; A3. Molecular beam eitaxy; B2. Semiconducting III-V materials;
Electrical and optical properties of (Ga,In)(As,N)/(Al,Ga)As multi-quantum-well structures
Keywords: A1 ساختارهای کم حجم; 81.15.Hi; 81.05.Ea; 73.63.Hn; 78.66.Fd; 78.30.Fs; A1. Low-dimensional structures; A3. Molecular beam epitaxy; B2. Semiconducting III-V materials;
Resonant tunneling of electrons through a single self-assembled InAs quantum dot probed via a novel overlayed quantum dot electrode
Keywords: A1 ساختارهای کم حجم; 73.20.Dx; 81.05.Ea; 85.30.Vw; A1. Atomic force microscopy; A1. Low-dimensional structures; A1. Nano-structures; A3. Molecular beam epitaxy; B1. Nano-materials; B2. Semiconducting III-V materials;
InAs/InP quantum dots emitting in the 1.55μm wavelength region by inserting ultrathin GaAs and GaP interlayers
Keywords: A1 ساختارهای کم حجم; 81.07.Ta; 81.15.Hi; 81.05.Ea; 81.16.Dn; A1. Low-dimensional structures; A3. Chemical beam epitaxy; B2. Semiconducting III-V materials;
Intermixing in self-assembled InAs quantum dot formation
Keywords: A1 ساختارهای کم حجم; 61.10.Nz; 61.14.Hg; 68.35.Dv; 68.43.Mn; 68.65.Hb; A1. High-resolution X-ray diffraction; A1. Low-dimensional structures; A1. Reflection high-energy electron diffraction; A1. Segregation; B2. Semiconducting III-V materials;
Properties of Si-rich SiO2 films by RF magnetron sputtering
Keywords: A1 ساختارهای کم حجم; 68.35.Dv; 78.55.-m; 81.15.Cd; A1. Low-dimensional structures; A3. Physical vapor deposition process; B1. Nanomaterials; B2. Semiconducting materials;
Growth of one-dimensional Sb2S3 and Sb2Se3 crystals with straw-tied-like architectures
Keywords: A1 ساختارهای کم حجم; 81.10.Dn; 81.16.Be; A1. Crystal morphology; A1. Low-dimensional structures; A2. Hydrothermal crystal growth; B1. Nanomaterials;
Synthesis and optical properties of well-aligned ZnS nanowires on Si substrate
Keywords: A1 ساختارهای کم حجم; 71.24; 63.70; 78.30; A1. Low-dimensional structures; A2. Growth from vapor; B1. Nanomaterials; B1. Zinc compounds; B2. Phosphors;
Structural alteration of carbon nanoparticle and carbon nanoparticles carrying Pt clusters
Keywords: A1 ساختارهای کم حجم; 61.46.+w; 68.65.+g; 81.10.Bk; 84.60.Dn; A1. Crystallites; A1. Low-dimensional structures; B1. Metals; B1. Nanomaterials;
Molecular beam epitaxy growth of quantum dot lasers emitting around 1.5 μm on InP(3 1 1)B substrates
Keywords: A1 ساختارهای کم حجم; 81.15.Hi; 81.07.Ta; 78.55.Cr; 42.55.Px; A1. Low-dimensional structures; A2. Molecular beam epitaxy; A3. Quantum dot lasers;
Emission wavelength control of InAs quantum dots in a GaInAsP matrix grown on InP(3Â 1Â 1)B substrates
Keywords: A1 ساختارهای کم حجم; 68.65.+g.; 78.66.Fd.; 81.15.Hi.; 78.55.âm; A1. Low-dimensional structures; A3. Molecular beam epitaxy;
High-power 1.3μm InAs/GaInAs/GaAs QD lasers grown in a multiwafer MBE production system
Keywords: A1 ساختارهای کم حجم; 81.15.H; 85.30.V; 85.60.J; 42.55.S; A1. Low-dimensional structures; A3. Molecular beam epitaxy; B2. Semiconducting III-V materials; B3. Laser diodes;
Pyramids and domes in the InAs/GaAs(0Â 0Â 1) and Ge/Si(0Â 0Â 1) systems
Keywords: A1 ساختارهای کم حجم; 68.37.Ef; 68.47.Fg; 68.55.-a; 68.65.Hb; A1. Characterization; A1. Low-dimensional structures; A3. Molecular beam epitaxy; B2. Semiconducting germanium; B2. Semiconducting III-V materials;
Comparative study of InAs quantum dots grown on different GaAs substrates by MOCVD
Keywords: A1 ساختارهای کم حجم; 81.05.Ea; 78.67.Hc; 68.55.Jk; A1. Bimodal size distribution; A1. Low-dimensional structures; A3. Metalorganic chemical vapor deposition; A3. Self-assembled quantum dots; B1. Indium arsenide;
Evolution of structural and optical characteristics in InAs quantum dots capped by GaAs layers comparable to dot height
Keywords: A1 ساختارهای کم حجم; 68.65.+g; 78.66.Fd; 85.30.Vw; A1. Characterization; A1. Low-dimensional structures; A3. Molecular beam epitaxy; B1. Nanomaterials; B2. Semiconducting III-V materials;
Metastable group II sulphides grown by MBE: surface morphology and crystal structure
Keywords: A1 ساختارهای کم حجم; 81.05.Dz; 81.10.Aj; 81.15.Ef; 81.30.Kf; 68.55.Jk; A1. Low-dimensional structures; A3. Molecular beam epitaxy; B1. Sulfides; B2. Semiconducting II-VI materials;