Orientation dependence behavior of self-assembled (In,Ga)As quantum structures on GaAs surface

We report on the formation of (In,Ga)As self-assembled quantum structures grown on different orientations of GaAs along one side of the stereographic triangle between (1 0 0) and (1 1 1)A. The samples were characterized by atomic force microscopy. A systematic transition from zero-dimensional (In,Ga)As quantum dots to one-dimensional quantum wires was observed as the substrate was varied along the side of the triangle between (1 0 0) and (1 1 1)A. An explanation for the role of the substrate in determining the size of the nanostructure is proposed.