کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9829784 1524499 2005 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Intermixing in self-assembled InAs quantum dot formation
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Intermixing in self-assembled InAs quantum dot formation
چکیده انگلیسی
The influence of growth parameters and substrate material on the basic processes during strain-induced InAs-quantum dot (QD) formation and the resulting structural properties of the QDs is studied with reflection high-energy electron diffraction (RHEED), atomic force microscopy (AFM), and X-ray diffraction. The process of strain-induced QD formation is strongly influenced by the intermixing with substrate material and the desorption of indium at high temperatures. From the experimental results, we conclude that the strain-energy modification due to temperature-dependent intermixing has a larger influence on QD formation than temperature-dependent kinetic processes at the surface. Interestingly, we also find that the maximum growth temperature limited by desorption depends on the growth speed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 278, Issues 1–4, 1 May 2005, Pages 46-50
نویسندگان
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