کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10707470 | 1023647 | 2011 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Quantum dots and quantum dashes in the narrow-gap InSb/InAsSbP system
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Quantum dots and quantum dashes in the narrow-gap InSb/InAsSbP system Quantum dots and quantum dashes in the narrow-gap InSb/InAsSbP system](/preview/png/10707470.png)
چکیده انگلیسی
InSb quantum dots (QDs) and quantum dashes (Q-dashes) were obtained on InAs-rich substrate by both LPE and MOVPE methods. Bimodal mechanism of the formation of the InSb quantum dots was observed on InAs binary surface during the LPE growth. The low-density (5Ã108Â cmâ2) big quantum dots with 12Â nm in height and high-density (1Ã1010Â cmâ2) small quantum dots with 4Â nm in height were found to be present simultaneously. Deposition from the InSb melt over the InAs0.61Sb0.13P0.26 matrix layer lattice-matched with InAs substrate resulted in the uniformity of the InSb QDs. The Q-dashes with density (2.5Ã109Â cmâ2) with dimensions of 30Â nm in height, 500Â nm in length and 200Â nm in width were grown by the MOVPE method. The obtained Q-dashes were oriented along the [1Â 1Â 0] direction. A drastic change in the dot geometry with dependence on III/V ratio of the components in the vapor phase was observed. The shape and the density of the InSb Q-dashes can be determined by the surface chemistry of the InAs(Sb,P) matrix layer.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 318, Issue 1, 1 March 2011, Pages 379-384
Journal: Journal of Crystal Growth - Volume 318, Issue 1, 1 March 2011, Pages 379-384
نویسندگان
Konstantin Moiseev, Petr Dement'ev, Vyacheslav Romanov, Maya Mikhailova,