کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9829857 | 1524499 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Study of electroluminescence quenching in the InGaN/GaN blue diode with multi-quantum barrier structure
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Study of electroluminescence quenching in the InGaN/GaN blue diode with multi-quantum barrier structure Study of electroluminescence quenching in the InGaN/GaN blue diode with multi-quantum barrier structure](/preview/png/9829857.png)
چکیده انگلیسی
This work has demonstrated electroluminescence (EL) quenching of the InGaN/GaN quantum well (QW) diodes with multi-quantum barrier (MQB) structure at several temperatures from 20 to 300Â K. Both high- and low-energy bands indicate a surprising tendency when the temperature and injection current are altered. Increasing temperature reduces the high-energy band and clearly increases the quantum efficiency of the low-energy band. The device with MQB improves the quantum efficiency throughout the whole temperature range and displays good agreement with the EL-integrated intensity in this study. The sample with an optimal MQB structure could significantly improve the quantum efficiency both at low temperature up to one order and room temperature up to 20% compared with the sample without the MQB structure.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 278, Issues 1â4, 1 May 2005, Pages 421-425
Journal: Journal of Crystal Growth - Volume 278, Issues 1â4, 1 May 2005, Pages 421-425
نویسندگان
Ray-Ming Lin, Chung-Han Lin, Jen-Cheng Wang, Tzer-En Nee, Bor-Ren Fang, Ruey-Yu Wang,