کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9829873 | 1524499 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Triggered luminescence in a strained Si1âxGex/Si single quantum well with surface as an electron reservoir
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
It is demonstrated that strained Si1âxGex/Si single quantum wells (SQWs) are capable of generating light pulses simply by controlling the population of only one type of carriers in the SQW through longitudinal electric fields. The unique band lineup of strained Si1âxGex/Si QWs allows loose confinement of electrons, which makes the electrons easy to be detrapped upon application of electric field. At a weak positive surface bias, an electron reservoir is formed in the near-surface region while holes stay in the QW so that electrons and holes are spatially apart and thereby luminescence signal is diminished. Upon removal of the bias voltage, the electrons that have built up in the near-surface are driven back to the QW, turning on luminescence. Triggered 50Â ns light pulse train was generated with alternating bias voltage waveform for a single-shot excitation of electron-hole pairs at the outset.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 278, Issues 1â4, 1 May 2005, Pages 512-515
Journal: Journal of Crystal Growth - Volume 278, Issues 1â4, 1 May 2005, Pages 512-515
نویسندگان
N. Yasuhara, S. Fukatsu,