کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9829983 1524501 2005 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
A comparative study of the growth mechanism of InAs/GaAs and GaP/GaAs heterostructures and strained layered superlattices by atomic layer epitaxy
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
A comparative study of the growth mechanism of InAs/GaAs and GaP/GaAs heterostructures and strained layered superlattices by atomic layer epitaxy
چکیده انگلیسی
A self-limiting mechanism in atomic layer epitaxy (ALE) has been invesitgated for the heterostructures and superlattices of III-V compounds. InAs/InAs(0 0 1), InAs/GaAs(0 0 1), GaAs/InAs(0 0 1), InxGa1−xAs/GaAs(0 0 1), GaP/GaP(0 0 1) GaP/GaAs(0 0 1) and (InAs)m(GaAs)n/GaAs(0 0 1) were grown by pulsed-jet-epitaxy with trimethylgallium, trimethylindium, trisdimethylaminoarsine, trisdimethylaminophosophine, arsine and phosphine as source materials. The self-limiting mechanism was largely affected by lattice mismatch between epitaxial layer and the substrate and by an atomic level surface morphology. The incorporation of misfit dislocations at the heterointerface played an important role in the self-limiting mechanism. The strained-layered superlattice of (InAs)m(GaAs)n enabled us to grow InGaAs layer with an effectively high indium composition.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 276, Issues 3–4, 1 April 2005, Pages 374-380
نویسندگان
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