کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9830042 | 1524502 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Microstructure and property of Czochralski-grown Si-TaSi2 eutectic in situ composite for field emission
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Directional solidification of eutectic alloys yields various kinds of in situ composites with interesting and excellent properties, among which the semiconductor-metal eutectic with three-dimensional array of Schottky junctions grown in the composite is useful in electronic applications. This paper reports the experimental research on the Si/TaSi2 rod-like eutectic composite for field emission. By the Czochralski crystal growth technique, the composite with highly oriented TaSi2 fibres embedded in the (1 1 1) monocrystal n-type Si matrix is obtained. The average fibre diameter is 1.79 μm, the average fibre spacing is 10.0 μm and the average fibre density is 9.25Ã105/cm2. The fibre distribution characteristic is also studied. The TaSi2 fibres with hexagonal crystal structure present various cross-section shapes. Furthermore, the composite is preferentially etched to form the cone-shaped TaSi2 field emission array protruding above the Si matrix and the field emission property measurement shows that the turn-on field is about 4.4 MV/m which is quite well.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 276, Issues 1â2, 15 March 2005, Pages 92-96
Journal: Journal of Crystal Growth - Volume 276, Issues 1â2, 15 March 2005, Pages 92-96
نویسندگان
Jun Zhang, Chunjuan Cui, Min Han, Jun Chen, Ningsheng Xu, Lin Liu, Hengzhi Fu,