کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9830044 | 1524502 | 2005 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Epitaxy of copper on α-Al2O3(0 0 1) by atomic layer deposition
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Epitaxy of copper on α-Al2O3(0 0 1) by atomic layer deposition Epitaxy of copper on α-Al2O3(0 0 1) by atomic layer deposition](/preview/png/9830044.png)
چکیده انگلیسی
A combined X-ray diffraction (XRD) and Transmission Electron Microscopy (TEM) study have been carried out on copper films grown by atomic layer deposition at 400 °C. The copper films have been grown on single crystalline (0 0 1) oriented α-Al2O3 up to a thickness of 500 nm. The films were relaxed and the diffraction peak broadening in 2θ was mainly dependent on the copper grain size. Broadening of the diffraction peaks in Ï was found to be related to defects (mosaicity and intrinsic microstrain). The deposited films were epitaxial and grew with the (1 1 1) plane in parallel to the substrate surface. Extensive twinning in the copper grains in different Cuã1 1 1ã directions occurred according to the TEM study, both in directions perpendicular to the substrate surface ([1 1 1] and [1¯1¯1¯]) and along other ã1 1 1ã directions as well. As an effect of a (1¯11) twin, an extra Cu(5 1 1) orientation was present in the XRD data.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 276, Issues 1â2, 15 March 2005, Pages 102-110
Journal: Journal of Crystal Growth - Volume 276, Issues 1â2, 15 March 2005, Pages 102-110
نویسندگان
Tobias Törndahl, Jun Lu, Mikael Ottosson, Jan-Otto Carlsson,