کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9830076 | 1524503 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Growth of highly c-axis-oriented aluminum nitride thin films on molybdenum electrodes using aluminum nitride interlayers
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Highly c-axis-oriented aluminum nitride (AlN) thin films have been prepared on molybdenum (Mo) electrodes by using AlN interlayers. AlN interlayers were prepared between the Mo electrodes and silicon substrates, such as AlN/Mo/AlN/SiO2/Si. The crystallinity and crystal orientation of the AlN films and Mo electrodes strongly depend on the thickness of the AlN interlayers. Although the sputtering conditions were the same, the full-width at half-maximum of the X-ray rocking curves of the AlN films decreased from 9.1° to 2.5° by using the AlN interlayer with a thickness of 200 nm. Furthermore, the interlayers drastically changed the morphologies of the AlN films by affecting the grain growth patterns.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 275, Issues 3â4, 1 March 2005, Pages 383-388
Journal: Journal of Crystal Growth - Volume 275, Issues 3â4, 1 March 2005, Pages 383-388
نویسندگان
Toshihiro Kamohara, Morito Akiyama, Naohiro Ueno, Kazuhiro Nonaka, Hiroshi Tateyama,