G-pulses and semiconductor segregation in μg Bridgman growth

The impact of g-pulses on the semiconductor solid segregation in a generic μg Bridgman growth arrangement has been discussed here from a computational point of view with the help of a time-dependent computer code. The present calculations indicate that segregation is weakly dependent on the geometry of the pulse if the g-dose, at equal activity time, is the same. However, solid dopant patterns as well as the magnitude of the relative variation with regard to a basic state are different for each one of the three semiconductors analyzed. Finally, to show the potentialities of the methodology proposed, the concomitant dynamic and thermal impact have also been discussed as a function of the shape of the pulse applied.