کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9830174 | 1524504 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Element segregation during crystal growth processes of Ce2PdxCo1âxSi3 intermetallic compounds
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
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چکیده انگلیسی
Crystal growth experiments for various Ce2PdxCo1âxSi3 intermetallic compounds with AlB2-type hexagonal crystal structure were accomplished by floating zone methods. Congruent melting of the Ce2PdxCo1âxSi3 compounds was revealed. Considerable element segregation with accumulation of metallic components (Pd+Co) in the melt was observed, which gave rise to the occurrence of a Co-rich minority phase in the quenched last zone. In the crystals the transition metal content is reduced compared with the nominal value. The segregation behaviour is the reason for a strong tendency towards morphological instability of the melt-crystal interface. It is discussed in terms of existing phase diagram data and convective features.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 275, Issues 1â2, 15 February 2005, Pages e109-e114
Journal: Journal of Crystal Growth - Volume 275, Issues 1â2, 15 February 2005, Pages e109-e114
نویسندگان
I. Mazilu, W. Löser, G. Behr, J. Werner, J. Eckert, L. Schultz,