کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9830218 | 1524505 | 2005 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Concomitant incorporation of antimony and nitrogen in GaAsSbN lattice-matched to GaAs
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
GaAsSbN is a potential material for GaAs-based long wavelength optoelectronic devices. In this work, using solid source molecular beam epitaxy in conjunction with a radio frequency plasma-assisted nitrogen source and a antimony cracker source, we will demonstrate closely lattice-matched condition of GaAsSbN/GaAs with lattice mismatch <1000Â ppm. Closely lattice-matched GaAsSbN/GaAs samples were obtained which showed room temperature and 4Â K photoluminescence emission at â¼1300Â nm, with N and Sb concentration of â¼2.3% and â¼7%, respectively. Competitive incorporation of Sb and N was observed, as the presence of Sb promotes N incorporation. This competition enhances Sb-surfactant effect observed in GaAsSbN layer grown with a slight compressive strain.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 274, Issues 3â4, 1 February 2005, Pages 355-361
Journal: Journal of Crystal Growth - Volume 274, Issues 3â4, 1 February 2005, Pages 355-361
نویسندگان
S. Wicaksono, S.F. Yoon, K.H. Tan, W.K. Cheah,