کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9830225 | 1524505 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effects of Nb doping on highly fatigue-resistant thin films of (Pb0.8Ba0.2)ZrO3 for ferroelectric memory application
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Niobium-doped (Pb0.8Ba0.2)ZrO3 (PBNZ) thin films were prepared by RF-magnetron sputtering at room temperature followed by postannealing at 700 °C. The doping concentration of Nb is in the range from 0 up to 2.5 at%. The introduction of Nb enhances the ferroelectric property and suppresses the leakage current of the PBNZ films. A large remanent polarization (
Pr) of 2Pr=35 μC/cm2 can be obtained from a doping of 1.5 at% Nb in the PBNZ film in comparison to that of 19 μC/cm2 from the undoped PBZ film. The Pt/PBNZ/Pt capacitor also exhibits a high fatigue resistance against polarization switching up to 1010 cycle as that of Pt/PBZ/Pt. Moreover, an improvement of retention property can be also achieved from Nb doping.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 274, Issues 3â4, 1 February 2005, Pages 402-406
Journal: Journal of Crystal Growth - Volume 274, Issues 3â4, 1 February 2005, Pages 402-406
نویسندگان
Cheng-Lung Hung, Tai-Bor Wu,