کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9830270 | 1524506 | 2005 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effects of the deposition conditions and annealing process on the electric properties of hot-filament CVD diamond films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Effects of the deposition conditions and annealing process on the electric properties of hot-filament CVD diamond films Effects of the deposition conditions and annealing process on the electric properties of hot-filament CVD diamond films](/preview/png/9830270.png)
چکیده انگلیسی
By using different deposition conditions, four CVD diamond films with different qualities and orientation were grown by the hot-filament CVD technique. The dielectric properties of these films before and after annealing were investigated in detail. A study of the relationship between the different deposition conditions and annealing process with respect to the dielectric properties was carried out. These CVD diamond films were also characterized with Raman spectroscopy, XRD and I-V characteristics. High-quality CVD diamond films were grown on Si substrate mechanically scratched with diamond powder. The annealing process reduces the hydrogen contamination of the films and therefore improves the film quality. CVD diamond films with good electric properties such as a resistivity of 1.2Ã1011 Ω cm at a voltage of 50 V, a dielectric constant of 5.73 and a dielectric loss of 0.02 at a frequency of 2 MHz were obtained.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 274, Issues 1â2, 15 January 2005, Pages 21-27
Journal: Journal of Crystal Growth - Volume 274, Issues 1â2, 15 January 2005, Pages 21-27
نویسندگان
Minglong Zhang, Yiben Xia, Linjun Wang, Beibei Gu, Qingfeng Su, Yanyan Lou,