کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9830292 | 1524506 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of oxygen partial pressure ratios on the properties of Al-N co-doped ZnO thin films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
p-Type zinc oxide (ZnO) thin films with C-axis orientations were realized using the DC reactive magnetron sputtering by Al and N co-doping method. Second ion mass spectroscopy (SIMS) tests proved that both Al and N were doped in the ZnO films and the incorporation of Al facilitated the N solution into ZnO, thus promoted the formation of p-type conduction. When oxygen partial pressure ratios was 40% or 85%, the as-grown ZnO thin films showed p-type conduction, and the latter had better electrical properties. The obtained p-type ZnO films showed a resistivity of 157 Ω cm, a hole concentration of 5.59Ã1017 cmâ3, and a Hall mobility of 0.0711 cm2/V s at room temperature. X-ray diffraction (XRD) patterns showed that the ZnO film prepared in 60% of oxygen partial pressure ratio had the best C-axis orientation. The as-grown ZnO films possessed transmittance of about 90% in the visible region.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 274, Issues 1â2, 15 January 2005, Pages 178-182
Journal: Journal of Crystal Growth - Volume 274, Issues 1â2, 15 January 2005, Pages 178-182
نویسندگان
Zhi-zhen Ye, Qing Qian, Guo-Dong Yuan, Bing-Hui Zhao, De-Wei Ma,