کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9837308 1525273 2005 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Positive temperature coefficient of resistivity of polyaniline films in the framework of phonon-assisted tunnelling model
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Positive temperature coefficient of resistivity of polyaniline films in the framework of phonon-assisted tunnelling model
چکیده انگلیسی
In the present paper it is shown that a change from semiconducting behaviour of conductivity to metallic behaviour observed in polyaniline (PANI) films [Long et al., Physica B 325 (2003) 208; 344 (2004) 82] and fibres [Adams et al., Synth. Met. 101 (1999) 685] at higher temperatures could be explained on the basis of phonon-assisted tunnelling model. A transition from negative temperature coefficient of resistivity (TCR) to positive TCR in the framework of this model occurs at the temperatures, at which the phonon emission dominates in the process of tunnelling.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 370, Issues 1–4, 15 December 2005, Pages 168-171
نویسندگان
, ,